DatasheetsPDF.com

MTY16N80E

Part Number	MTY16N80E
Manufacturer	ON Semiconductor
Description	Power Field Effect Transistor
Published	Feb 9, 2016
Detailed Description	MTY16N80E Designer’s™ Data Sheet TMOS E−FET.™ Power Field Effect Transistor N−Channel Enhancement−Mode Silicon Gate This...
Datasheet	MTY16N80E PDF File

Overview

MTY16N80E Designer’s™ Data Sheet TMOS E−FET.
™ Power Field Effect Transistor N−Channel Enhancement−Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage−blocking capability without degrading performance over time.
In addition, this advanced TMOS E−FET is designed to withstand high energy in the avalanche and commutation modes.
Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
...

Similar Datasheet

MTY16N80E TMOS POWER FET 16 AMPERES 800 VOLTS RDS(on) = 0.50 OHM - Motorola
MTY16N80E Power Field Effect Transistor - ON Semiconductor

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)