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NVD6495NL

Part Number	NVD6495NL
Manufacturer	ON Semiconductor
Description	N-Channel Power MOSFET
Published	Feb 9, 2016
Detailed Description	MOSFET – Power, N-Channel, Logic Level 100 V, 25 A, 50 mW NVD6495NL Features • Low RDS(on) • 100% Avalanche Tested • A...
Datasheet	NVD6495NL PDF File

Overview

MOSFET – Power, N-Channel, Logic Level 100 V, 25 A, 50 mW NVD6495NL Features • Low RDS(on) • 100% Avalanche Tested • AEC−Q101 Qualified • These Devices are Pb−Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 100 V Gate−to−Source Voltage − Continuous VGS $20 V Continuous Drain Steady TC = 25°C ID Current State TC = 100°C 25 A 18 Power Dissipation Steady TC = 25°C PD State 83 W Pulsed Drain Current tp = 10 ms Operating and Storage Temperature Range IDM 80 A TJ, Tstg −55 to °C +175 Source Current (Body Diode) IS Single Pulse Drain−to−Source Avalanche EAS Energy (VDD = 50 Vdc, VGS = 10 Vdc, IL(pk) = 23 A, L = 0.
3 mH, RG = 25 W) Lead Temperature for Soldering TL Purposes, 1/8″ from Case for 10 Seconds 25 A 79 mJ 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device.
If any of these limits are exceeded, device functional...

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NVD6495NL N-Channel Power MOSFET - ON Semiconductor

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