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CS8N65A8H

HUAJING MICROELECTRONICS
Part Number CS8N65A8H
Manufacturer HUAJING MICROELECTRONICS
Description Silicon N-Channel Power MOSFET
Published Feb 9, 2016
Detailed Description Silicon N-Channel Power MOSFET CS8N65 A8H ○R General Description： CS8N65 A8H, the silicon N-channel Enhanced VDMOSFE...
Datasheet PDF File CS8N65A8H PDF File

CS8N65A8H
CS8N65A8H

Overview
Silicon N-Channel Power MOSFET CS8N65 A8H ○R General Description： CS8N65 A8H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.
The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.
The package form is TO-220AB, which accords with the RoHS standard.
Features： l Fast Switching l Low ON Resistance(Rdson≤1.
3Ω) l Low Gate Charge (Typical Data:28nC) l Low Reverse transfer capacitances(Typical:14pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger.
Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter VDSS Drain-to-Source Voltage ID IDMa1 VGS EAS a2 EAR a1 IAR a1 dv/dt a3 Continuous Drain Current Continuous Drain Current TC = 100 °C Pulsed Drain Current Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Energy ,Repetitive Avalanche Current Peak Diode Recovery dv/dt Power Dissipation PD Derating Factor above 25°C TJ，Tstg TL Operating Junction and Storage Temperature Range Maximum Temperature for Soldering VDSS ID PD(TC=25℃) RDS(ON)Typ 650 8 110 0.
9 Rating 650 8 5.
5 32 ±30 500 40 2.
8 5.
0 110 0.
88 150，–55 to 150 300 V A W Ω Units V A A A V mJ mJ A V/ns W W/℃ ℃ ℃ WUXI CHI NA RESOURCES HUAJ I NG M I CROELECTRONI CS C O.
, LTD.
Pag e 1 of 1 0 20 15V0 1 CS8N65 A8H ○R Electrical Characteristics（Tc= 25℃ unless otherwise specified）： OFF Characteristics Symbol Parameter Test Conditions VDSS ΔBVDSS/ΔTJ IDSS IGSS(F) IGSS(R) Drain to Source Breakdown Voltage Bvdss Temperature Coefficient Drain to Source Leakage Current Gate to Source Forward Leakage Gate to Source Reverse Leakage VGS=0V, ID=250µA ID=250uA,Reference25℃ VDS = 650V, VGS= 0V, Ta = 25℃ VDS =520V, VGS= 0V, Ta = 125℃ VGS =+30V VGS =-30V ON Characteristics Symbol Parameter RDS(ON) Drain-to-Source On-Resistance VGS(TH) Gate Th...


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