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IRFP054

Vishay
Part Number IRFP054
Manufacturer Vishay
Description Power MOSFET
Published Feb 10, 2016
Detailed Description Power MOSFET IRFP054, SiHFP054 Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) ...
Datasheet PDF File IRFP054 PDF File

IRFP054
IRFP054

Overview
Power MOSFET IRFP054, SiHFP054 Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.
) (nC) Qgs (nC) Qgd (nC) Configuration 60 VGS = 10 V 160 48 54 Single 0.
014 TO-247AC D S D G G S N-Channel MOSFET FEATURES • Dynamic dV/dt Rating • Isolated Central Mounting Hole • 175 °C Operating Temperature • Fast Switching • Ease of Paralleling • Simple Drive Requirements • Compliant to RoHS Directive 2002/95/EC Available RoHS* COMPLIANT DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-247AC package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220AB devices.
The TO-247AC is similar but superior to the earlier TO-218 package because of its isolated mouting hole.
It also provides greater creepage distance between pins to meet the requirements of most safety specifications.
ORDERING INFORMATION Package Lead (Pb)-free SnPb TO-247AC IRFP054PbF SiHFP054-E3 IRFP054 SiHFP054 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Currente Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor Single Pulse Avalanche Energyb Maximum Power Dissipation Peak Diode Recovery dV/dtc VGS at 10 V TC = 25 °C TC = 100 °C TC = 25 °C VDS VGS ID IDM EAS PD dV/dt Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d for 10 s TJ, Tstg Mounting Torque 6-32 or M3 screw Notes a.
Repetitive rating; pulse width limited by maximum junction temperature (see fig.
11).
b.
VDD = 25 V, starting TJ = 25 °C, L = 92 μH, Rg = 25 Ω, IAS = 90 A (see fig.
12).
c.
ISD ≤ 90 A, dI/dt ≤ 200 A/μs, VDD ≤ VDS, TJ ≤ 175 °C.
d.
1.
6 mm from case.
e.
Current limited by the package, (die current = 90 A).
LIMIT 60 ± 20 70 64 360 1.
5 373 230 4.
5 - 55 to + 175 300 10...


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