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SIHFI530G

Vishay
Part Number SIHFI530G
Manufacturer Vishay
Description Power MOSFET
Published Feb 10, 2016
Detailed Description Power MOSFET IRFI530G, SiHFI530G Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC...
Datasheet PDF File SIHFI530G PDF File

SIHFI530G
SIHFI530G

Overview
Power MOSFET IRFI530G, SiHFI530G Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.
) (nC) Qgs (nC) Qgd (nC) Configuration 100 VGS = 10 V 33 5.
4 15 Single 0.
16 TO-220 FULLPAK D G GDS S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free SnPb FEATURES • Isolated Package • High Voltage Isolation = 2.
5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.
8 mm • 175 °C Operating Temperature • Dynamic dV/dt Rating • Low Thermal Resistance • Lead (Pb)-free Available Available RoHS* COMPLIANT DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applications.
The molding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink.
This isolation is equivalent to...


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