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SIR876ADP

Vishay
Part Number SIR876ADP
Manufacturer Vishay
Description N-Channel 100-V (D-S) MOSFET
Published Feb 10, 2016
Detailed Description New Product N-Channel 100 V (D-S) MOSFET SiR876ADP Vishay Siliconix PRODUCT SUMMARY VDS (V) 100 RDS(on) (Ω) Max. 0.0...
Datasheet PDF File SIR876ADP PDF File

SIR876ADP
SIR876ADP

Overview
New Product N-Channel 100 V (D-S) MOSFET SiR876ADP Vishay Siliconix PRODUCT SUMMARY VDS (V) 100 RDS(on) (Ω) Max.
0.
0108 at VGS = 10 V 0.
0114 at VGS = 7.
5 V 0.
0145 at VGS = 4.
5 V ID (A)a 40 40 40 PowerPAK® SO-8 Qg (Typ.
) 16.
3 nC 6.
15 mm D 8D 7 D 6 D 5 S 1S 5.
15 mm 2 S 3G 4 Bottom View Ordering Information: SiR876ADP-T1-GE3 (Lead (Pb)-free and Halogen-free) FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Primary Side Switch • Telecom/Server 48 V, Full/Half-Bridge DC/DC • Industrial D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C ID TA = 70 °C Pulsed Drain Current (t = 300 µs) IDM Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C IS Single Pulse A...


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