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2N3635

Part Number	2N3635
Manufacturer	ON Semiconductor
Description	Low Power Transistors
Published	Feb 11, 2016
Detailed Description	2N3634, 2N3634L, 2N3635, 2N3635L, 2N3636, 2N3636L, 2N3637, 2N3637L Low Power Transistors PNP Silicon Features • MIL−PR...
Datasheet	2N3635 PDF File

Overview

2N3634, 2N3634L, 2N3635, 2N3635L, 2N3636, 2N3636L, 2N3637, 2N3637L Low Power Transistors PNP Silicon Features • MIL−PRF−19500/357 Qualified • Available as JAN, JANTX, JANTXV and JANHC MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Characteristic Symbol 2N3634/L 2N3636/L 2N3635/L 2N3637/L Unit Collector −Emitter Voltage Collector −Base Voltage Emitter −Base Voltage Collector Current − Continuous VCEO VCBO VEBO IC −140 −175 −140 −175 −5.
0 1.
0 Vdc Vdc Vdc Adc Total Device Dissipation @ TA = 25°C Total Device Dissipation @ TC = 25°C Operating and Storage Junction Temperature Range PT PT TJ, Tstg 1.
0 5.
0 −65 to +200 W W °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA 175 °C/W Thermal Resistance, Junction to Case RqJC 35 °C/W Stresses exceeding those listed in the Maximum Ratings table may damage the device.
If any of these limits are exceeded, device functionality should not be assumed, damage may occur ...

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