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2N3637

ON Semiconductor
Part Number 2N3637
Manufacturer ON Semiconductor
Description Low Power Transistors
Published Feb 11, 2016
Detailed Description 2N3634, 2N3634L, 2N3635, 2N3635L, 2N3636, 2N3636L, 2N3637, 2N3637L Low Power Transistors PNP Silicon Features • MIL−PR...
Datasheet PDF File 2N3637 PDF File

2N3637
2N3637

Overview
2N3634, 2N3634L, 2N3635, 2N3635L, 2N3636, 2N3636L, 2N3637, 2N3637L Low Power Transistors PNP Silicon Features • MIL−PRF−19500/357 Qualified • Available as JAN, JANTX, JANTXV and JANHC MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Characteristic Symbol 2N3634/L 2N3636/L 2N3635/L 2N3637/L Unit Collector −Emitter Voltage Collector −Base Voltage Emitter −Base Voltage Collector Current − Continuous VCEO VCBO VEBO IC −140 −175 −140 −175 −5.
0 1.
0 Vdc Vdc Vdc Adc Total Device Dissipation @ TA = 25°C Total Device Dissipation @ TC = 25°C Operating and Storage Junction Temperature Range PT PT TJ, Tstg 1.
0 5.
0 −65 to +200 W W °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA 175 °C/W Thermal Resistance, Junction to Case RqJC 35 °C/W Stresses exceeding those listed in the Maximum Ratings table may damage the device.
If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
ORDERING INFORMATION Level Device 2N3634 2N3635 JAN JANTX JANTXV JANHC 2N3636 2N3637 2N3634L 2N3635L 2N3636L 2N3637L Package TO−39 TO−5 Shipping Bulk Bulk © Semiconductor Components Industries, LLC, 2013 November, 2013 − Rev.
1 1 http://onsemi.
com COLLECTOR 3 2 BASE 1 EMITTER TO−5 CASE 205AA STYLE 1 2N3634L 2N3635L 2N3636L 2N3637L TO−39 CASE 205AB STYLE 1 2N3634 2N3635 2N3636 2N3637 Publication Order Number: 2N3637/D 2N3634, 2N3634L, 2N3635, 2N3635L, 2N3636, 2N3636L, 2N3637, 2N3637L ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (IC = −10 mA) 2N3634, 2N3635 2N3636, 2N3637 Emitter−Base Cutoff Current (VEB = −3.
0 V) (VEB = −5.
0 V) Collector−Emitter Cutoff Current (VCE = −100 V) Collector−Base Cutoff Current (VCB = −100 V) (VCB = −140 V) (VCB = −175 V) ON CHARACTERISTICS (Note 1) 2N3634, 2N3635 2N3636, 2N3637 DC Current Gain (IC = −0.
1 mA, VCE = −10...


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