DatasheetsPDF.com

SIHFD113

Vishay
Part Number SIHFD113
Manufacturer Vishay
Description Power MOSFET
Published Feb 11, 2016
Detailed Description www.vishay.com IRFD113, SiHFD113 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qg...
Datasheet PDF File SIHFD113 PDF File

SIHFD113
SIHFD113

Overview
www.
vishay.
com IRFD113, SiHFD113 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.
) (nC) Qgs (nC) Qgd (nC) Configuration 60 VGS = 10 V 7 2 7 Single 0.
8 HVMDIP S G D D G S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free FEATURES • For Automatic Insertion • Compact Plastic Package • End Stackable • Fast Switching • Low Drive Current • Easily Paralleled • Excellent Temperature Stability • Compliant to RoHS Directive 2002/95/EC Note * Pb containing terminations are not RoHS compliant, exemptions may apply DESCRIPTION The HVMDIP technology is the key to Vishay’s advanced line of power MOSFET transistors.
The efficient geometry and unique processing of the HVMDIP design achieves very low on-state resistance combined with high transconductance and extreme device ruggedness.
HVMDIPs feature all of the established advantages of MOSFETs such as voltage control, very fast switching, ease of paralleling, and temperature stability of the electrical parameters.
The HVMDIP 4 pin, dual-in-line package brings the advantages of HVMDIPs to high volume applications where automatic PC board insertion is desireable, such as circuit boards for computers, printers, telecommunications equipment, and consumer products.
Their compatibility with automatic insertion equipment, low-profile and end stackable features represent the stat-of-the-art in power device packaging.
HVMDIP IRFD113PbF SiHFD113-E3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltagea VDS Gate-Source Voltage VGS Continuous Drain Current Pulsed Drain Currentb VGS at 10 V TC = 25 °C ID IDM Linear Derating Factor Inductive Current, Clamped Maximum Power Dissipation L = 100 μH TC = 25 °C ILM PD Operating Junction and Storage Temperature Range TJ, Tstg Soldering Recommendations (Peak Temperature) for 10 s Notes a.
TJ = 25 °C to 150 °C b.
Repetitive rating; pulse width limited by maximum junction temperature.
c.
1.
6 mm ...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)