DatasheetsPDF.com

IHW40T60

Infineon
Part Number IHW40T60
Manufacturer Infineon
Description IGBT
Published Feb 12, 2016
Detailed Description TRENCHSTOP™ Series IHW40T60 q Low Loss DuoPack : IGBT in TRENCHSTOP™ technology with soft, fast recovery anti-parallel...
Datasheet PDF File IHW40T60 PDF File

IHW40T60
IHW40T60

Overview
TRENCHSTOP™ Series IHW40T60 q Low Loss DuoPack : IGBT in TRENCHSTOP™ technology with soft, fast recovery anti-parallel Emitter Controlled HE diode Features:  Very low VCE(sat) 1.
5V (typ.
)  Maximum junction temperature 175°C  Short circuit withstand time 5s  TRENCHSTOP™ and fieldstop technology for 600V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior - low VCE(sat) and positive temperature coefficient  Low EMI  Low gate charge  Qualified according to JEDEC1 for target applications  Pb-free lead plating; RoHS compliant  Complete product spectrum and PSpice models : http://www.
infineon.
com/igbt/ Applications:  Inductive Cooking  Soft & Hard Switching Applications Type IHW40T60 VCE 600V IC 40A VCE(sat),Tj=25°C 1.
55V Tj,max 175C Marking H40T60B C G E PG-TO247-3 Package PG-TO247-3 Maximum Ratings Parameter Collector-emitter voltage, Tj ≥ 25C DC collector current, limited by Tjmax TC = 25C TC = 100C Pulsed collector current, tp limited by Tjmax Turn off safe operating area, VCE = 600V, Tj = 175C, tp = 1µs Diode forward current, limited by Tjmax TC = 25C TC = 100C Diode pulsed current, tp limited by Tjmax Gate-emitter voltage Transient Gate-emitter voltage (tp < 10 µs, D<0.
01) Short circuit withstand time2) VGE = 15V, VCC  400V, Tj  150C Power dissipation TC = 25C Operating junction temperature Storage temperature Soldering temperature, 1.
6mm (0.
063 in.
) from case for 10s Symbol VCE IC ICpuls - IF IFpuls VGE tSC Ptot Tj Tstg - 1 J-STD-020 and JESD-022 2) Allowed number of short circuits: <1000; time between short circuits: >1s.
IFAG IPC TD VLS 1 Value 600 80 40 120 120 60 30 90 20 25 5 303 -40.
.
.
+175 -55.
.
.
+150 260 Unit V A V s W C Rev.
2.
1 10.
12.
2013 Thermal Resistance Parameter Characteristic IGBT thermal resistance, junction – case Diode thermal resistance, junction – case Thermal resistance, junction – ambient TRENCHSTOP™ Series IHW40T60 q Symbol RthJC RthJCD RthJA ...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)