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K11908-010K

HAMAMATSU
Part Number K11908-010K
Manufacturer HAMAMATSU
Description Two-color detector
Published Feb 12, 2016
Detailed Description Two-color detector K11908-010K Two InGaAs PIN PD with different spectral response are arranged one above the other to ...
Datasheet PDF File K11908-010K PDF File

K11908-010K
K11908-010K

Overview
Two-color detector K11908-010K Two InGaAs PIN PD with different spectral response are arranged one above the other to cover a broad wavelength range The K11908-010K incorporates an InGaAs PIN photodiode (cutoff wavelength: λc=1.
7 μm) mounted over a long wavelength type InGaAs PIN photodiode (λc=2.
55 μm), along the same optical axis.
The spectral response covered from 0.
9 μm to 2.
55 μm as wide range and delivers low noise.
Features InGaAs (λc=1.
7 μm) mounted over InGaAs (λc=2.
55 μm) along the same optical axis Wide spectral response range: 0.
9 to 2.
55 μm Low noise, low dark current Applications Radiation thermometer Spectroscopy Optical measurement equipment Structure Parameter Window material Package Photosensitive area Symbol - - Condition InGaAs (λc=1.
7 μm) InGaAs (λc=2.
55 μm) Specification Borosilicate glass 4-pin TO-5 2.
4 × 2.
4 φ1.
0 Unit - mm Absolute maximum ratings Parameter Reverse voltage Operating temperature Storage temperature Symbol VR max Topr Tstg Condition InGaAs (λc=1.
7 μm), Ta=25 °C InGaAs (λc=2.
55 μm), Ta=25 °C Value 2 1 -40 to +70 -55 to +85 Unit V °C °C Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality.
Always be sure to use the product within the absolute maximum ratings.
www.
hamamatsu.
com 1 Tow-color detector K11908-010K Electrical and optical characteristics (Ta=25 °C) Parameter Spectral response range Peak sensitivity wavelength Photosensitivity Dark current Cutoff frequency Terminal capacitance Shunt resistance Detectivity Symbol λ λp S ID fc Ct Rsh D* Condition InGaAs (λc=1.
7 μm) InGaAs (λc=2.
55 μm) InGaAs (λc=1.
7 μm) InGaAs (λc=2.
55 μm) InGaAs (λc=1.
7 μm), λ=λp InGaAs (λc=2.
55 μm), λ=λp InGaAs (λc=1.
7 μm), VR=1 V InGaAs (λc=2.
55 μm), VR=0.
5 V InGaAs (λc=1.
7 μm), -3 dB VR=0 V, RL=50 Ω InGaAs (λc=2.
55 μm), -3 dB VR=0 V, RL=50 Ω InGaAs (λc=1.
7 μm), VR=0 V f=1 MHz InGaAs (λc=2.
55 μm), VR=0 V f=1 MHz InGaAs (λc=1.
7 μm), VR=10 mV InGaAs (λc=2.
55 μm), VR=10 mV InGaAs (λc=1.
7 ...


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