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MGBR10U50

Unisonic Technologies
Part Number MGBR10U50
Manufacturer Unisonic Technologies
Description MOS GATED BARRIER RECTIFIER
Published Feb 12, 2016
Detailed Description UNISONIC TECHNOLOGIES CO., LTD MGBR10U50 Preliminary MOS GATED BARRIER RECTIFIER DIODE  DESCRIPTION The UTC MGBR10...
Datasheet PDF File MGBR10U50 PDF File

MGBR10U50
MGBR10U50

Overview
UNISONIC TECHNOLOGIES CO.
, LTD MGBR10U50 Preliminary MOS GATED BARRIER RECTIFIER DIODE  DESCRIPTION The UTC MGBR10U50 is a surface mount mos gated barrier rectifier, it uses UTC’s advanced technology to provide customers with low forward voltage drop and high current capability, etc.
The UTC MGBR10U50 suitable for free wheeling, high frequency inverters, polarity protection, and low voltage.
 FEATURES * Ultra low forward voltage drop * High current capability * High surge capability * High efficiency  SYMBOL 21 AK  ORDERING INFORMATION Ordering Number Lead Free Halogen Free MGBR10U50L-TA2-T MGBR10U50G-TA2-T Note: Pin Assignment: A: Anode K: Cathode Package TO-220-2 Pin Assignment 12 KA Packing Tube  MARKING www.
unisonic.
com.
tw Copyright © 2015 Unisonic Technologies Co.
, Ltd 1 of 3 QW-R601-128.
b MGBR10U50 Preliminary DIODE  ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Single phase, half wave, 60Hz, resistive or inductive load.
For capacitance load, derate current by 20%.
PARAMETER SYMBOL RATINGS UNIT DC Blocking Voltage (Note 1) VRM 50 V Working Peak Reverse Voltage Peak Repetitive Reverse Voltage VRWM VRRM 50 50 V V RMS Reverse Voltage Average Rectified Output Current TC=125°C VR(RMS) IO 35 10 V A Non-Repetitive Peak Forward Surge Current 8.
3ms Single Half Sine-Wave Superimposed on Rated Load IFSM 180 A Repetitive Peak Avalanche Power (1μs, 25°C) PARM 5000 W Operating Junction Temperature Storage Temperature TJ TSTG -65~+150 -65~+150 °C °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
 THERMAL CHARACTERISTICS PARAMETER Junction to Case SYMBOL θJC RATINGS 2.
5  ELECTRICAL CHARACTERISTICS (TA =25°C unless otherwise specified.
) UNIT °C/W PARAMETER SYMBOL TEST CONDITIONS Reverse Breakdown Voltage (Note 1) V(BR)R IR=0.
50mA Forward...


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