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SIRA06DP

Vishay
Part Number SIRA06DP
Manufacturer Vishay
Description N-Channel MOSFET
Published Feb 12, 2016
Detailed Description New Product N-Channel 30 V (D-S) MOSFET SiRA06DP Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () (Max.) 0.0025...
Datasheet PDF File SIRA06DP PDF File

SIRA06DP
SIRA06DP

Overview
New Product N-Channel 30 V (D-S) MOSFET SiRA06DP Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () (Max.
) 0.
0025 at VGS = 10 V 30 0.
0035 at VGS = 4.
5 V ID (A)a, g 40 40 Qg (Typ.
) 22.
5 nC PowerPAK® SO-8 6.
15 mm D 8D 7 D 6 D 5 S 1S 5.
15 mm 2 S 3 G 4 Bottom View Ordering Information: SiRA06DP-T1-GE3 (Lead (Pb)-free and Halogen-free) FEATURES • TrenchFET® Gen IV Power MOSFET • 100 % Rg and UIS Tested • Material categorization: For definitions of compliance please see www.
vishay.
com/doc?99912 APPLICATIONS • Synchronous Rectification • High Power Density DC/DC • VRMs and Embedded DC/DC D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage VDS VGS TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C ID Pulsed Drain Current (t = 300 µs) TA = 70 °C IDM Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C IS Single Pulse Avalanche Current Sing...


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