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SIRA10DP

Vishay
Part Number SIRA10DP
Manufacturer Vishay
Description N-Channel MOSFET
Published Feb 12, 2016
Detailed Description www.vishay.com SiRA10DP Vishay Siliconix N-Channel 30 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 30 RDS(on) () (MAX.) ...
Datasheet PDF File SIRA10DP PDF File

SIRA10DP
SIRA10DP

Overview
www.
vishay.
com SiRA10DP Vishay Siliconix N-Channel 30 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 30 RDS(on) () (MAX.
) 0.
0037 at VGS = 10 V 0.
0050 at VGS = 4.
5 V ID (A) a, g 60 g 60 g Qg (TYP.
) 15.
4 nC PowerPAK® SO-8 Single D D8 D7 D6 5 6.
15 mm 1 Top View 5.
15 mm 1 2S 3S 4S G Bottom View Ordering Information: SiRA10DP-T1-GE3 (Lead (Pb)-free and Halogen-free) FEATURES • TrenchFET® Gen IV power MOSFET • 100 % Rg and UIS tested • Material categorization: For definitions of compliance please see www.
vishay.
com/doc?99912 APPLICATIONS • High power density DC/DC • Synchronous rectification • VRMs and embedded DC/DC G D S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current (t = 100 μs) Continuous Source-Drain Diode Current Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipation Operating Junction and...


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