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SIS496EDNT

Vishay
Part Number SIS496EDNT
Manufacturer Vishay
Description N-Channel MOSFET
Published Feb 12, 2016
Detailed Description www.vishay.com SiS496EDNT Vishay Siliconix N-Channel 30 V (D-S) MOSFET PowerPAK® 1212-8S D D D 6 7 5 D 8 3.3 m...
Datasheet PDF File SIS496EDNT PDF File

SIS496EDNT
SIS496EDNT

Overview
www.
vishay.
com SiS496EDNT Vishay Siliconix N-Channel 30 V (D-S) MOSFET PowerPAK® 1212-8S D D D 6 7 5 D 8 3.
3 mm 1 Top View 3.
3 mm PRODUCT SUMMARY VDS (V) RDS(on) max.
() at VGS = 10 V RDS(on) max.
() at VGS = 4.
5 V Qg typ.
(nC) ID (A) Configuration 1 4 3 S 2 S S G Bottom View 30 0.
0048 0.
0062 14 50 a Single FEATURES • TrenchFET® power MOSFET • 100 % Rg and UIS tested • Thin 0.
75 mm height • Typical ESD performance 2500 V • Material categorization: for definitions of compliance please see www.
vishay.
com/doc?99912 APPLICATIONS • DC/DC converter • Battery switch • Power management • For mobile computing G D S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free and halogen-free PowerPAK 1212-8S SiS496EDNT-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-source voltage Gate-source voltage Continuous drain current (TJ = 150 °C) Pulsed drain current (t = 100 μs) TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C...


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