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G4PC30S

International Rectifier
Part Number G4PC30S
Manufacturer International Rectifier
Description IRG4PC30S
Published Feb 12, 2016
Detailed Description PD - 91586A INSULATED GATE BIPOLAR TRANSISTOR IRG4PC30S Standard Speed IGBT Features • Standard: Optimized for minimu...
Datasheet PDF File G4PC30S PDF File

G4PC30S
G4PC30S

Overview
PD - 91586A INSULATED GATE BIPOLAR TRANSISTOR IRG4PC30S Standard Speed IGBT Features • Standard: Optimized for minimum saturation voltage and low operating frequencies ( < 1kHz) • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry standard TO-247AC package C G E n-channel VCES = 600V VCE(on) typ.
= 1.
4V @VGE = 15V, IC = 18A Benefits • Generation 4 IGBTs offer highest efficiency available • IGBTs optimized for specified application conditions • Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBTs Absolute Maximum Ratings VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM VGE EARV PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Parameter Collector-to-Emitter Breakdown Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Q Clamped Inductive Load Current R Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy S Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw.
Thermal Resistance RθJC RθCS RθJA Wt Parameter Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient, typical socket mount Weight www.
irf.
com TO-247AC Max.
600 34 18 68 68 ± 20 10 100 42 -55 to + 150 300 (0.
063 in.
(1.
6mm) from case ) 10 lbf•in (1.
1N•m) Units V A V mJ W °C Typ.
––– 0.
24 ––– 6 (0.
21) Max.
1.
2 ––– 40 ––– Units °C/W g (oz) 1 4/15/2000 IRG4PC30S Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)CES V(BR)ECS ∆V(BR)CES/∆TJ VCE(ON) VGE(th) ∆VGE(th)/∆TJ gfe ICES IGES Parameter Collector-to-Emitter Breakdown Voltage Emitter-to-Collector Breakdown Voltage T Temperature Coeff.
of Breakdown Voltage Collector-to-Emitter Saturation Voltage Gate Threshold Voltage Temperature Coeff.
of Threshold Voltage Forward Transconductance U Zero Gate Voltage Collector Current Gate-to-Emitter Leakage Current Mi...


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