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SPB18P06PG

Infineon
Part Number SPB18P06PG
Manufacturer Infineon
Description SIPMOS Power-Transistor
Published Feb 12, 2016
Detailed Description SIPMOS® Power-Transistor Features • P-Channel • Enhancement mode • Avalanche rated • dv /dt rated • 175°C operating temp...
Datasheet PDF File SPB18P06PG PDF File

SPB18P06PG
SPB18P06PG

Overview
SIPMOS® Power-Transistor Features • P-Channel • Enhancement mode • Avalanche rated • dv /dt rated • 175°C operating temperature • Pb-free lead plating; RoHS compliant ° Halogen-free according to IEC61249-2-21 ° Qualified according to AEC Q101 Product Summary V DS R DS(on),max ID SPB18P06P G -60 V 0.
13 Ω -18.
6 A PG-TO263-3 Type Package SPB18P06PG PG-TO263-3 Tape and reel information 1000 pcs / reel Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current Pulsed drain current ID I D,pulse T A=25 °C T A=100 °C T A=25 °C Marking Lead free 18P06P Yes Packing Non dry Value steady state -18.
7 -13.
2 -74.
8 Unit A Avalanche energy...


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