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HWL23NPB

Part Number	HWL23NPB
Manufacturer	Hexawave
Description	L-Band GaAS Power FET
Published	Feb 14, 2016
Detailed Description	Features • Plastic Packaged GaAs Power FET • Suitable for Commercial Wireless Applications • High Efficiency • 3V to 6V ...
Datasheet	HWL23NPB PDF File

Overview

Features • Plastic Packaged GaAs Power FET • Suitable for Commercial Wireless Applications • High Efficiency • 3V to 6V Operation Description The HWL23NPB is a medium Power GaAs FET using surface mount type plastic package for various L-Band applications.
It is suitable for various 900 MHz, 1900 MHz cellular/wireless applications.
HWL23NPB L-Band GaAS Power FET Autumn 2002 V1 Outline Dimensions 1 23 Pin 1: Source Pin 2: Gate Pin 3: Drain Absolute Maximum Ratings VDS Drain to Source Voltage +7V VGS Gate to Source Voltage -5V ID Drain Current IDSS IG Gate Current 1mA TCH Channel Temperature 150°C TSTG Storage Temperature -65 to +150°C PT Power Dissipation 0.
7 Watt PB Package...

Similar Datasheet

HWL23NPB L-Band GaAS Power FET - Hexawave

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