DatasheetsPDF.com

MGBR30L120C

UTC
Part Number MGBR30L120C
Manufacturer UTC
Description Dual MOS GATED BARRIER RECTIFIER
Published Feb 14, 2016
Detailed Description UNISONIC TECHNOLOGIES CO., LTD MGBR30L120C DUAL MOS GATED BARRIER RECTIFIER  DESCRIPTION The UTC MGBR30L120C is a dual ...
Datasheet PDF File MGBR30L120C PDF File

MGBR30L120C
MGBR30L120C

Overview
UNISONIC TECHNOLOGIES CO.
, LTD MGBR30L120C DUAL MOS GATED BARRIER RECTIFIER  DESCRIPTION The UTC MGBR30L120C is a dual mos gated barrier rectifiers, it uses UTC’s advanced technology to provide customers with low forward voltage drop and high switching speed, etc.
 FEATURES * Low forward voltage drop * High switching speed  SYMBOL DIODE  ORDERING INFORMATION Ordering Number Lead Free Halogen Free MGBR30L120CL-TA3-T MGBR30L120CG-TA3-T MGBR30L120CL-TF3-T MGBR30L120CG-TF3-T Note: Pin Assignment: A: Anode K: Cathode Package TO-220 TO-220F Pin Assignment 123 AKA AKA Packing Tube Tube  MARKING www.
unisonic.
com.
tw Copyright © 2015 Unisonic Technologies Co.
, Ltd 1 of 3 QW-R204-051.
B MGBR30L120C DIODE  ABSOLUTE MAXIMUM RATINGS (PER LEG) (TA=25°C unless otherwise specified) Single phase, half wave, 60Hz, resistive or inductive load.
For capacitance load, derate current by 20%.
PARAMETER SYMBOL RATINGS UNIT DC Blocking Voltage VRM 120 V Working Peak Reverse Voltage Peak Repetitive Reverse Voltage VRWM VRRM 120 120 V V Average Rectified Output Current Per Device Per Leg Total IO 15 A 30 A Non-Repetitive Peak Forward Surge Current 8.
3ms Single Half Sine-Wave Superimposed on Rated Load IFSM 150 A Operating Junction Temperature TJ -65~+150 °C Storage Temperature TSTG -65~+150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
 THERMAL DATA PARAMETER Junction to Ambient Junction to Case SYMBOL θJA θJC RATINGS 62.
5 3.
31  ELECTRICAL CHARACTERISTICS (PER LEG) (TA =25°C unless otherwise specified.
) UNIT °C/W °C/W PARAMETER SYMBOL TEST CONDITIONS Reverse Breakdown Voltage (Note 1) V(BR)R IR=0.
50mA Forward Voltage Drop VFM IF=15A, TJ=25°C IF=15A, TJ=125°C Leakage Current (Note 1) IRM VR=120V, TJ=25°C VR=120V, TJ=125°C Notes: 1.
Short duration pulse test used to mini...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)