DatasheetsPDF.com

SI1002R

Vishay
Part Number SI1002R
Manufacturer Vishay
Description N-channel MOSFET
Published Feb 14, 2016
Detailed Description www.vishay.com N-Channel 30 V (D-S) MOSFET Si1002R Vishay Siliconix PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) MAX. 0.56...
Datasheet PDF File SI1002R PDF File

SI1002R
SI1002R

Overview
www.
vishay.
com N-Channel 30 V (D-S) MOSFET Si1002R Vishay Siliconix PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) MAX.
0.
560 at VGS = 4.
5 V 0.
620 at VGS = 2.
5 V 0.
700 at VGS = 1.
8 V 1.
100 at VGS = 1.
5 V SC-75A D 3 ID (A) 0.
5 0.
2 0.
2 0.
05 Qg (TYP.
) 0.
72 nC 1 G Top View 2 S Marking Code: L Ordering Information: Si1002R-T1-GE3 (Lead (Pb)-free and Halogen-free) FEATURES • TrenchFET® power MOSFET • 100 % Rg tested • Gate-source ESD protected: 1000 V • Material categorization: For definitions of compliance please see www.
vishay.
com/doc?99912 APPLICATIONS • Load switch • High speed switching • DC/DC converters / boost converters • For smart phones, tablet PCs and mobile computing G D S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 150 °C) a TA = 25 °C TA = 70 °C ID Pulsed Drain Current (t = 100 μs) IDM Continuous Source-Drain Diode Current TA = 25 °C IS Maximum Power Dissipation a TA = 25 °C TA = 70 °C PD Operating Junction and Storage Temperature Range TJ, Tstg LIMIT 30 ±8 0.
61 a,b 0.
49 a,b 2 0.
18 a,b 0.
22 a,b 0.
14 a,b -55 to 150 UNIT V A A W °C THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient b Notes a.
Surface mounted on 1" x 1" FR4 board.
b.
t = 5 s.
t≤5s Steady State SYMBOL RthJA TYP.
470 560 MAX.
565 675 UNIT °C/W S14-0770-Rev.
A, 14-Apr-14 1 Document Number: 64257 For technical questions, contact: pmostechsupport@vishay.
com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.
vishay.
com/doc?91000 www.
vishay.
com Si1002R Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate ...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)