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SIGC41T120R3E

Infineon
Part Number SIGC41T120R3E
Manufacturer Infineon
Description IGBT
Published Feb 14, 2016
Detailed Description IGBT3 Power Chip FEATURES:  600V Trench & Field Stop technology  low turn-off losses  short tail current  positive t...
Datasheet PDF File SIGC41T120R3E PDF File

SIGC41T120R3E
SIGC41T120R3E

Overview
IGBT3 Power Chip FEATURES:  600V Trench & Field Stop technology  low turn-off losses  short tail current  positive temperature coefficient  easy paralleling SIGC41T120R3E This chip is used for:  power module Applications:  drives C G E Chip Type VCE IC SIGC41T120R3E 1200V 35A Die Size 6.
5 x 6.
37 mm2 Package sawn on foil Mechanical Parameters Raster size Emitter pad size (incl.
gate pad) Gate pad size Area total Thickness Wafer size Max.
possible chips per wafer Passivation frontside Pad metal Backside metal Die bond Wire bond Reject ink dot size Recommended storage environment 6.
5 x 6.
37 4.
992 x 4.
898 1.
139 x 1.
139 mm2 41.
4 140 µm 200 mm 640 Photoimide 3200 nm AlSiCu...


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