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IRG4BC30FDPBF

Part Number	IRG4BC30FDPBF
Manufacturer	International Rectifier
Description	INSULATED GATE BIPOLAR TRANSISTOR
Published	Feb 14, 2016
Detailed Description	PD - 94938A IRG4BC30FDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Fast CoPack IGBT Feat...
Datasheet	IRG4BC30FDPBF PDF File

Overview

PD - 94938A IRG4BC30FDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Fast CoPack IGBT Features Fast: Optimized for medium operating frequencies (1-5 kHz in hard switching, >20kHz in resonant mode).
Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations Industry standard TO-220AB package Lead-Free C G E n-channel VCES = 600V VCE(on) typ.
= 1.
59V @VGE = 15V, IC = 17A Benefits Generation -4 IGBT's offer highest efficiencies available IGBT's optimized for specific application conditions HEXFRED diodes optimized for performance with IGBT's.
Minimized recovery characteristics require less/no snubbing Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBT's TO-220AB Absolute Maximum Ratings VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 100°C IFM VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Parameter Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Diode Continuous Forward Current Diode Maximum Forward Current Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
Thermal Resistance RθJC RθJC RθCS RθJA Wt www.
irf.
com Parameter Junction-to-Case - IGBT Junction-to-Case - Diode Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight Max.
600 31 17 124 124 12 120 ± 20 100 42 -55 to +150 300 (0.
063 in.
(1.
6mm) from case) 10 lbfin (1.
1 Nm) Units V A V W °C Min.
------------------------- Typ.
----------0.
50 ----2 (0.
07) Max.
1.
2 2.
5 -----80 ------ Units °C/W g (oz) 1 01/26/10 IRG4BC30FDPbF Electrical Characteristics @ TJ = 25°C (unless otherwise...

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IRG4BC30FDPBF INSULATED GATE BIPOLAR TRANSISTOR - International Rectifier

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