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IPB160N08S4-03

Infineon
Part Number IPB160N08S4-03
Manufacturer Infineon
Description Power-Transistor
Published Feb 15, 2016
Detailed Description OptiMOS™-T2 Power-Transistor Features • N-channel - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow...
Datasheet PDF File IPB160N08S4-03 PDF File

IPB160N08S4-03
IPB160N08S4-03

Overview
OptiMOS™-T2 Power-Transistor Features • N-channel - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested IPB160N08S4-03 Product Summary V DS R DS(on),max ID 80 V 3.
2 mW 160 A PG-TO263-7-3 Type IPB160N08S4-03 Package PG-TO263-7-3 Marking 4N0803 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current1) I D T C=25°C, V GS=10V T C=100°C, V GS=10V2) Pulsed drain current2) Avalanche energy, single pulse2) Avalanche current, single pulse Gate source voltage Power dissipation Operating and storage temperature I D,pulse T C=25°C E AS I D=80A I AS - V GS - P tot T C=25°C T j, T stg - Value 160 120 640 350 120 ±20 208 -55 .
.
.
+175 Unit A mJ A V W °C Rev.
1.
0 page 1 2014-06-20 IPB160N08S4-03 Parameter Symbol Conditions Thermal characteristics2) Thermal resistance, junction - case SMD version, device on PCB R thJC R thJA minimal footprint 6 cm2 cooling area3) min.
Values typ.
Unit max.
- - 0.
72 K/W - - 62 - - 40 Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0V, I D= 1mA 80 - -V Gate threshold voltage V GS(th) V DS=V GS, I D=150µA 2.
0 3.
0 4.
0 Zero gate voltage drain current I DSS V DS=80V, V GS=0V, T j=25°C - 0.
03 1 µA Gate-source leakage current Drain-source on-state resistance V DS=80V, V GS=0V, T j=125°C2) I GSS V GS=20V, V DS=0V R DS(on) V GS=10V, I D=100A - 10 200 - - 100 nA - 2.
6 3.
2 mW Rev.
1.
0 page 2 2014-06-20 IPB160N08S4-03 Parameter Dynamic characteristics2) Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics2) Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Reverse Diode Diode continous forward current2) Diode pulse current2) D...


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