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IPB80N07S4-05

Infineon
Part Number IPB80N07S4-05
Manufacturer Infineon
Description Power-Transistor
Published Feb 15, 2016
Detailed Description OptiMOS™-T2 Power-Transistor Features • N-channel - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 17...
Datasheet PDF File IPB80N07S4-05 PDF File

IPB80N07S4-05
IPB80N07S4-05

Overview
OptiMOS™-T2 Power-Transistor Features • N-channel - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested IPB80N07S4-05 IPI80N07S4-05, IPP80N07S4-05 Product Summary VDS RDS(on),max (SMD version) ID 75 V 5.
2 mW 80 A PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Type IPB80N07S4-05 IPI80N07S4-05 IPP80N07S4-05 Package PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Marking 4N0705 4N0705 4N0705 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current1) I D T C=25°C, V GS=10V T C=100°C, V GS=10V2) Pulsed drain current2) Avalanche energy, single pulse2) Avalanche current, single pulse Gate source voltage Power dissipation Operating and storage temperature I D,pulse T C=25°C E AS I D=40A I AS - V GS - P tot T C=25°C T j, T stg - Value 80 80 320 240 65 ±20 150 -55 .
.
.
+175 Unit A mJ A V W °C Rev.
1.
0 page 1 2014-07-14 IPB80N07S4-05 IPI80N07S4-05, IPP80N07S4-05 Parameter Symbol Conditions min.
Values typ.
Unit max.
Thermal characteristics2) Thermal resistance, junction - case R thJC Thermal resistance, junction ambient, leaded R thJA - - - 1.
0 K/W - - 62 SMD version, device on PCB R thJA minimal footprint 6 cm2 cooling area3) - - 62 - 40 Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance V (BR)DSS V GS=0V, I D= 1mA V GS(th) V DS=V GS, I D=90µA I DSS V DS=75V, V GS=0V V DS=75V, V GS=0V, T j=125°C2) I GSS V GS=20V, V DS=0V R DS(on) V GS=10V, I D=80A V GS=10V, I D=80A, SMD version 75 - -V 2.
0 3.
0 4.
0 - 0.
01 1 µA - 10 200 - - 100 nA - 4.
8 5.
5 mW - 4.
5 5.
2 Rev.
1.
0 page 2 2014-07-14 Parameter Dynamic characteristics2) Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay t...


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