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IPD90N10S4-06

Infineon
Part Number IPD90N10S4-06
Manufacturer Infineon
Description Power-Transistor
Published Feb 15, 2016
Detailed Description OptiMOSTM-T2 Power-Transistor Features • N-channel - Normal Level - Enhancement mode • AEC qualified • MSL1 up to 260°C ...
Datasheet PDF File IPD90N10S4-06 PDF File

IPD90N10S4-06
IPD90N10S4-06

Overview
OptiMOSTM-T2 Power-Transistor Features • N-channel - Normal Level - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested IPD90N10S4-06 Product Summary VDS RDS(on),max ID 100 V 6.
7 mW 90 A PG-TO252-3-313 TAB 1 3 Type IPD90N10S4-06 Package Marking PG-TO252-3-313 4N1006 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current1) I D T C=25°C, V GS=10V T C=100°C, V GS=10V1) Pulsed drain current2) Avalanche energy, single pulse2) Avalanche current, single pulse Gate source voltage Power dissipation Operating and storage temperature...


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