DatasheetsPDF.com

IPLU250N04S4-1R7

Infineon
Part Number IPLU250N04S4-1R7
Manufacturer Infineon
Description Power-Transistor
Published Feb 15, 2016
Detailed Description IPLU250N04S4-1R7 OptiMOS™-T2 Power-Transistor Features • N-channel - Enhancement mode • AEC qualified • MSL1 up to 260°...
Datasheet PDF File IPLU250N04S4-1R7 PDF File

IPLU250N04S4-1R7
IPLU250N04S4-1R7

Overview
IPLU250N04S4-1R7 OptiMOS™-T2 Power-Transistor Features • N-channel - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green product (RoHS compliant); 100% lead free • Ultra low Rds(on) • 100% Avalanche tested Product Summary VDS RDS(on) ID 40 V 1.
7 mW 250 A H-PSOF-8-1 Tab 8 1 Tab 1 8 Type Package IPLU250N04S4-1R7 H-PSOF-8-1 Marking 4N041R7 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current I D T C=25°C, V GS=10V1) T C=100°C, V GS=10V2) Pulsed drain current2) Avalanche energy, single pulse2) Avalanche current, single pulse Gate source voltage Power dissipation Operating and storage temperature I D,pulse T C=25 °C E AS I D=125 A I AS - V GS - P tot T C=25 °C T j, T stg - Value 250 180 1000 170 250 ±20 188 -55 .
.
.
+175 Unit A mJ A V W °C Rev.
1.
0 page 1 2014-12-08 IPLU250N04S4-1R7 Parameter Symbol Conditions Thermal characteristics2) Thermal resistance, junction - case SMD version, device on PCB R thJC R thJA minimal footprint 6 cm2 cooling area3) min.
Values typ.
Unit max.
- - 0.
8 K/W - - 62 - - 40 Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=1 mA 40 - -V Gate threshold voltage V GS(th) V DS=V GS, I D=80 µA 2.
0 3.
0 4.
0 Zero gate voltage drain current I DSS V DS=40 V, V GS=0 V, T j=25 °C - 0.
1 10 µA Gate-source leakage current Drain-source on-state resistance V DS=18 V, V GS=0 V, T j=85 °C2) I GSS RDS(on) V GS=20 V, V DS=0 V V GS=10 V, I D=100 A - - 1 20 - 100 nA 1.
2 1.
7 mΩ Rev.
1.
0 page 2 2014-12-08 IPLU250N04S4-1R7 Parameter Symbol Conditions min.
Values typ.
Unit max.
Dynamic characteristics2) Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time C iss C oss Crss t d(on) tr t d(off) tf V GS=0 V, V DS=25 V, f =1 MHz V ...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)