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UTT2N10

UTC
Part Number UTT2N10
Manufacturer UTC
Description 100V MOSFET
Published Feb 15, 2016
Detailed Description UNISONIC TECHNOLOGIES CO., LTD UTT2N10 Preliminary 100V COMPLEMENTARY ENHANCEMENT MODE MOSFET (N-CHANNEL)  DESCRIPT...
Datasheet PDF File UTT2N10 PDF File

UTT2N10
UTT2N10

Overview
UNISONIC TECHNOLOGIES CO.
, LTD UTT2N10 Preliminary 100V COMPLEMENTARY ENHANCEMENT MODE MOSFET (N-CHANNEL)  DESCRIPTION The UTC UTT2N10 is a complementary enhancement mode MOSFET, it uses UTC advanced technology to provide customers low on resistance, low gate charge and low threshold voltage.
The UTC UTT2N10 is universally applied in DC-AC Inverters and DC Motor control.
 FEATURES * N-CHANNEL RDS(on) < 0.
7Ω @VGS =10V RDS(on) < 1.
0Ω @VGS = 4.
5V * High switching speed  SYMBOL Power MOSFET  ORDERING INFORMATION Ordering Number UTT2N10G-AA3-R Note: Pin Assignment: G: Gate D: Drain Package SOT-223 S: Source Pin Assignment 123 GDS Packing Tape Reel  MARKING www.
unisonic.
com.
tw Copyright © 2014 Unisonic Technologies Co.
, Ltd 1 of 3 QW-R502-B19.
b UTT2N10 Preliminary Power MOSFET  ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Gate-Source Voltage VGSS ±20 V Drain-Source Voltage VDSS 100 V Drain Current Continuous VGS=10V, TA=25°C, t ≤10 sec Pulsed VGS=10V, TA=25°C (Note1) ID IDM 1A 4.
3 A Power Dissipation TA=25°C Derating PD 0.
87 W 6.
94 mW/°C Junction Temperature TJ -55~+150 °C Storage Temperature Range TSTG -55~+150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
 THERMAL CHARACTERISTICS PARAMETER SYMBOL RATINGS UNIT Junction to Ambient (Note) Junction to Case θJA 55 °C/W θJC 12 °C/W Notes: θJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
 ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current Forward Reverse BVDSS IDSS IGSS...


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