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FCP125N60E

Fairchild Semiconductor
Part Number FCP125N60E
Manufacturer Fairchild Semiconductor
Description N-Channel MOSFET
Published Feb 15, 2016
Detailed Description FCP125N60E — N-Channel SuperFET® II Easy-Drive MOSFET FCP125N60E N-Channel SuperFET® II Easy-Drive MOSFET 600 V, 29 A, ...
Datasheet PDF File FCP125N60E PDF File

FCP125N60E
FCP125N60E


Overview
FCP125N60E — N-Channel SuperFET® II Easy-Drive MOSFET FCP125N60E N-Channel SuperFET® II Easy-Drive MOSFET 600 V, 29 A, 125 mΩ November 2015 Features • 650 V @TJ = 150°C • Typ.
RDS(on) = 102 mΩ • Ultra Low Gate Charge (Typ.
Qg = 75 nC) • Low Effective Output Capacitance (Typ.
Coss(eff) = 258 pF) • 100% Avalanche Tested • RoHS Compliant Applications • Telecom / Sever Power Supplies • Industrial Power Supplies Description SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.
This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy.
Consequently, SuperFET II MOSFET easy-drive series offers slightly slower rise and fall times compared to the SuperFET II MOSFET series.
Noted by the “E” part number suffix, this family helps manage EMI issues and allows for easier design implementation.
For faster switching in applications where switching losses must be at an absolute minimum, please consider the SuperFET II MOSFET series.
D GDS TO-220 G S Absolute Maximum Ratings TC = 25oC unless otherwise noted.
Symbol VDSS VGSS ID IDM EAS IAR EAR dv/dt PD Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current - DC - AC - Continuous (TC = 25oC) - Continuous (TC = 100oC) - Pulsed Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy MOSFET dv/dt Peak Diode Recovery dv/dt Power Dissipation (TC = 25oC) - Derate Above 25oC (f > 1 Hz) (Note 1) (Note 2) (Note 1) (Note 1) (Note 3) TJ, TSTG TL Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds Thermal Characteristics Symbol RθJC RθJA Parameter Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
FCP125N60E 600 ±20 ±30 29 18 87 720 6 2.
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