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FDB86135

Fairchild Semiconductor
Part Number FDB86135
Manufacturer Fairchild Semiconductor
Description MOSFET
Published Feb 15, 2016
Detailed Description FDB86135 N-Channel Shielded Gate PowerTrench® MOSFET FDB86135 N-Channel Shielded Gate PowerTrench® MOSFET 100V, 176A, 3...
Datasheet PDF File FDB86135 PDF File

FDB86135
FDB86135


Overview
FDB86135 N-Channel Shielded Gate PowerTrench® MOSFET FDB86135 N-Channel Shielded Gate PowerTrench® MOSFET 100V, 176A, 3.
5mΩ May 2013 Features • Shielded Gate MOSFET Technology • Max RDS(on) = 3.
5mΩ at VGS = 10V, ID = 75A • Fast Switching Speed • Low Gate Charge • High Performance Trench Technology for Extremely Low RDS(on) • High Power and Current Handling Capability • RoHS Compliant General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology.
This process has been optimized for the on-state resistance and yet maintain superior switching performance.
Applications • DC-DC primary bridge • DC-DC Synchronous rectification • Hot swap D D GS D2-PAK FDB Series G MOSFET Maximum Ratings TC = 25oC unless otherwise noted Symbol VDSS VGSS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Curren - Continuous (Silicon Limited) - Continuous( Package Limited) - Continuous - Pulsed Single Pulsed Avalanche Energy Power Dissipation - TC = 25oC - TA = 25oC Operating and Storage Temperature Range TC = 25oC TC = 25oC TC = 25oC(Note 1a) (Note 3) (Note 1a) (Note 1b) S Ratings 100 ±20 176 120 75 704 658 227 2.
4 -55 to +175 Units V V A A mJ W W/oC oC Thermal Characteristics Symbol RθJC RθJA Parameter Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Package Marking and Ordering Information Device Marking FDB86135 Device FDB86135 Package D2-PAK (Note 1) (Note 1a) Ratings 0.
66 62.
5 Reel Size 330mm Tape Width 24mm Units oC/W Quantity 800 ©2011 Fairchild Semiconductor Corporation FDB86135 Rev.
C1 1 www.
fairchildsemi.
com FDB86135 N-Channel Shielded Gate PowerTrench® MOSFET Electrical Characteristics TC = 25oC unless otherwise noted Symbol Parameter Test Conditions Off Characteristics BVDSS ΔBVDSS ΔTJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gat...


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