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FDBL86361_F085

Fairchild Semiconductor
Part Number FDBL86361_F085
Manufacturer Fairchild Semiconductor
Description MOSFET
Published Feb 15, 2016
Detailed Description FDBL86361_F085 N-Channel PowerTrench® MOSFET FDBL86361_F085 N-Channel PowerTrench® MOSFET 80 V, 300 A, 1.4 mΩ December...
Datasheet PDF File FDBL86361_F085 PDF File

FDBL86361_F085
FDBL86361_F085

Overview
FDBL86361_F085 N-Channel PowerTrench® MOSFET FDBL86361_F085 N-Channel PowerTrench® MOSFET 80 V, 300 A, 1.
4 mΩ December 2014 Features „ Typical RDS(on) = 1.
1 mΩ at VGS = 10V, ID = 80 A „ Typical Qg(tot) = 172 nC at VGS = 10V, ID = 80 A „ UIS Capability „ RoHS Compliant „ Qualified to AEC Q101 Applications „ Automotive Engine Control „ PowerTrain Management „ Solenoid and Motor Drivers „ Integrated Starter/Alternator „ Primary Switch for 12V Systems D G S For current package drawing, please refer to the Fairchild web‐ site at http://www.
fairchildsemi.
com/dwg/PS/PSOF08A.
pdf.
MOSFET Maximum Ratings TJ = 25°C unless otherwise noted.
Symbol Parameter VDSS VGS ID Drain-to-Source Voltage Gate-to-Source Voltage Drain Current - Continuous (VGS=10) (Note 1) Pulsed Drain Current EAS Single Pulse Avalanche Energy PD Power Dissipation Derate Above 25oC TJ, TSTG RθJC RθJA Operating and Storage Temperature Thermal Resistance, Junction to Case Maximum Thermal Resistance, Junction to Ambient TC = 25°C TC = 25°C (Note 2) (Note 3) Ratings 80 ±20 300 See Figure 4 820 429 2.
86 -55 to + 175 0.
35 43 Units V V A mJ W W/oC oC oC/W oC/W Notes: 1: Current is limited by bondwire configuration.
2: Starting TJ = 25°C, L = 0.
4mH, IAS = 64A, VDD = 40V during inductor charging and VDD = 0V during time in avalanche.
3: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance, where the case thermal reference is defined as the solder mounting surface presented here is of the based drain pins.
RθJC is on mounting on a 1 guaranteed by design, in2 pad of 2oz copper.
while RθJAis determined by the board design.
The maximum rating Package Marking and Ordering Information Device Marking FDBL86361 Device FDBL86361_F085 Package MO-299A - - - ©2014 Fairchild Semiconductor Corporation FDBL86361_F085 Rev.
C1 1 www.
fairchildsemi.
com FDBL86361_F085 N-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted.
Symbol P...


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