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F50L1G41A

Elite Semiconductor
Part Number F50L1G41A
Manufacturer Elite Semiconductor
Description 3.3V 1 Gbit SPI-NAND Flash Memory
Published Feb 16, 2016
Detailed Description ESMT Flash PRODUCT LIST Parameters VCC Width Frequency Internal ECC Correction Transfer Rate Loading Throughput Power-up...
Datasheet PDF File F50L1G41A PDF File

F50L1G41A
F50L1G41A

Overview
ESMT Flash PRODUCT LIST Parameters VCC Width Frequency Internal ECC Correction Transfer Rate Loading Throughput Power-up Ready Time Max Reset Busy Time Note: 1.
x2 PROGRAM operation is not defined.
F50L1G41A (2Y) 3.
3V 1 Gbit SPI-NAND Flash Memory Values 3.
3V x1, x21, x4 104MHz 1-bit 9.
6ns 104MT/s 1ms (maximum value) 1ms (maximum value) FEATURES z Voltage Supply: 3.
3V (2.
7V~3.
6V) z Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit z Automatic Program and Erase - Page Program: (2K + 64) Byte - Block Erase: (128K + 4K) Byte z Page Read Operation - Page Size: (2K + 64) Byte - Read from Cell to Register with Internal ECC: 100us z Memory Cell: 1bit/Memory Cell z Support SPI-Mode 0 and SPI-Mode 31 z Fast Write Cycle Time - Program time:400us - Block Erase time: 4ms z Hardware Data Protection - Program/Erase Lockout During Power Transitions z Reliable CMOS Floating Gate Technology - Internal ECC Requirement: 1bit/512Byte - Endurance: 100K Program/Erase ...


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