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F59D2G81A

Elite Semiconductor
Part Number F59D2G81A
Manufacturer Elite Semiconductor
Description 2 Gbit (256M x 8 / 128M x 16) 1.8V NAND Flash Memory
Published Feb 16, 2016
Detailed Description ESMT Flash FEATURES  Voltage Supply: 1.8V (1.7V ~ 1.95V)  Organization x8: - Memory Cell Array: (256M + 8M) x 8bit - D...
Datasheet PDF File F59D2G81A PDF File

F59D2G81A
F59D2G81A

Overview
ESMT Flash FEATURES  Voltage Supply: 1.
8V (1.
7V ~ 1.
95V)  Organization x8: - Memory Cell Array: (256M + 8M) x 8bit - Data Register: (2K + 64) x 8bit x16: - Memory Cell Array: (128M + 4M) x 16bit - Data Register: (1K + 32) x 16bit  Automatic Program and Erase x8: - Page Program: (2K + 64) byte - Block Erase: (128K + 4K) byte x16: - Page Program: (1K + 32) word - Block Erase: (64K + 2K) word  Page Read Operation - Page Size: (2K + 64) Byte (x8) Page Size: (1K + 32) Word (x16) - Random Read: 25us (Max.
) - Serial Access: 45ns (Min.
)  Memory Cell: 1bit/Memory Cell  Fast Write Cycle Time - Program time: 350us (Typ.
) - Block Erase time: 3.
5ms (Typ.
) F59D2G81A / F59D2G161A 2 Gbit (256M x 8 / ...


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