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IRGP4790PBF

Part Number	IRGP4790PBF
Manufacturer	International Rectifier
Description	Insulated Gate Bipolar Transistor
Published	Feb 16, 2016
Detailed Description	VCES = 650V IC = 90A, TC =100°C tSC 5.5µs, TJ(max) = 175°C VCE(ON) typ. = 1.7V @ IC = 75A Applications  Industrial...
Datasheet	IRGP4790PBF PDF File

Overview

VCES = 650V IC = 90A, TC =100°C tSC 5.
5µs, TJ(max) = 175°C VCE(ON) typ.
= 1.
7V @ IC = 75A Applications  Industrial Motor Drive  UPS  Solar Inverters  Welding Features Low VCE(ON) and Switching Losses 5.
5µs Short Circuit SOA Square RBSOA Maximum Junction Temperature 175°C Positive VCE (ON) Temperature Coefficient Lead-Free, RoHs compliant IRGP4790PbF IRGP4790-EPbF Insulated Gate Bipolar Transistor C G E n-channel G Gate E GC IRGP4790PbF TO‐247AC C Collector E GC IRGP4790‐EPbF TO‐247AD E Emitter Benefits High Efficiency in a Wide Range of Applications Rugged Transient Performance Increased Reliability Excellent Current Sharing in Parallel Operation Environmentally ...

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IRGP4790PBF Insulated Gate Bipolar Transistor - International Rectifier

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