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IRGP6660DPBF

International Rectifier
Part Number IRGP6660DPBF
Manufacturer International Rectifier
Description Insulated Gate Bipolar Transistor
Published Feb 16, 2016
Detailed Description VCES = 600V IC = 60A, TC =100°C tSC ≥ 5µs, TJ(max) = 175°C VCE(ON) typ. = 1.7V @ IC = 48A Applications • Welding • H Bri...
Datasheet PDF File IRGP6660DPBF PDF File

IRGP6660DPBF
IRGP6660DPBF


Overview
VCES = 600V IC = 60A, TC =100°C tSC ≥ 5µs, TJ(max) = 175°C VCE(ON) typ.
= 1.
7V @ IC = 48A Applications • Welding • H Bridge Converters IRGP6660DPbF IRGP6660D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode CC C G E n-channel G Gate GCE IRGP6660DPbF TO-247AC C Collector E GC IRGP6660D-EPbF TO-247AD E Emitter Features Low VCE(ON) and switching losses Optimized diode for full bridge hard switch converters Square RBSOA and maximum junction temperature 175°C 5µs short circuit SOA Positive VCE (ON) temperature coefficient Lead-free, RoHS compliant Benefits High efficiency in a wide range of applications Optimized for welding and H bridge converters Improved reliability due to rugged hard switching performance and higher power capability Enables short circuit protection scheme Excellent current sharing in parallel operation Environmentally friendly Base part number IRGP6660DPBF IRGP6660D-EPBF Package Type TO-247AC TO-247AD Standard Pack Form Quantity Tube 25 Tube 25 Orderable Part Number IRGP6660DPBF IRGP6660D-EPBF Absolute Maximum Ratings Parameter Max.
VCES Collector-to-Emitter Voltage 600 IC @ TC = 25°C Continuous Collector Current 95 IC @ TC = 100°C ICM Continuous Collector Current Pulse Collector Current, VGE = 15V 60 144 ILM Clamped Inductive Load Current, VGE = 20V  IFRM @ TC = 100°C Diode Repetitive Peak Forward Current 192 30 IFM Diode Maximum Forward Current  VGE Continuous Gate-to-Emitter Voltage 192 ±20 PD @ TC = 25°C Maximum Power Dissipation 330 PD @ TC = 100°C Maximum Power Dissipation 167 TJ TSTG Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec.
-40 to +175 300 (0.
063 in.
(1.
6mm) from case) Mounting Torque, 6-32 or M3 Screw 10 lbf·in (1.
1 N·m) Thermal Resistance Parameter Min.
Typ.
Max.
RθJC (IGBT) RθJC (Diode) RθCS RθJA Thermal Resistance Junction-to-Case-(each IGBT)  Thermal Resistance Junction-to-Case-(each Diode)  Thermal Resistance, Case-...


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