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IPB065N10N3G

Infineon
Part Number IPB065N10N3G
Manufacturer Infineon
Description MOSFET
Published Feb 17, 2016
Detailed Description MOSFET MetalOxideSemiconductorFieldEffectTransistor OptiMOSTM OptiMOSª3Power-Transistor,100V IPB065N10N3G Data...
Datasheet PDF File IPB065N10N3G PDF File

IPB065N10N3G
IPB065N10N3G

Overview
MOSFET MetalOxideSemiconductorFieldEffectTransistor OptiMOSTM OptiMOSª3Power-Transistor,100V IPB065N10N3G DataSheet Rev.
2.
0 Final PowerManagement&Multimarket OptiMOSª3Power-Transistor,100V IPB065N10N3G 1Description Features •N-channel,normallevel •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplication •Idealforhigh-frequencyswitchingandsynchronousrectification •Halogen-freeaccordingtoIEC61249-2-21 D²PAK Table1KeyPerformanceParameters Parameter Value Unit VDS 100 V RDS(on),max 6.
5 mΩ ID 80 A Drain Pin 2, Tab Gate Pin 1 Source Pin 3 Type/OrderingCode IPB065N10N3 G Package PG-TO 263-3 Marking 065N10N RelatedLinks - 1) J-STD20 and JESD22 Final Data Sheet 2 Rev.
2.
0,2014-07-04 OptiMOSª3Power-Transistor,100V IPB065N10N3G TableofContents Description .
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2 Maximum ratings .
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4 Thermal characteristics .
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4 Electrical characteristics .
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5 Electrical characteristics diagrams .
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7 Package Outlines .
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11 Revision History .
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