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UF8010

UTC
Part Number UF8010
Manufacturer UTC
Description N-CHANNEL POWER MOSFET
Published Feb 18, 2016
Detailed Description UNISONIC TECHNOLOGIES CO., LTD UF8010 80A, 100V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC UF8010 uses advanced techno...
Datasheet PDF File UF8010 PDF File

UF8010
UF8010

Overview
UNISONIC TECHNOLOGIES CO.
, LTD UF8010 80A, 100V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC UF8010 uses advanced technology to provide excellent RDS(ON), fast switching speed, low gate charge, and excellent efficiency.
This device is suitable for high frequency DC-DC converters, UPS and motor control.
 FEATURES * RDS(ON) :12mΩ (Typ.
) * Lower gate-drain charge for lower switching losses * Perfect avalanche voltage and current performance * Fully characterized capacitance including effective COSS to simplify design  SYMBOL Power MOSFET  ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package UF8010L-TA3-T UF8010G-TA3-T TO-220 UF8010L-TF3-T UF8010G-TF3-T TO-220F UF8010L-TQ2-T UF8010G-TQ2-T TO-263 Note: Pin Assignment: G: Gate D: Drain S: Source Pin Assignment 123 GDS GDS GDS Packing Tube Tube Tube www.
unisonic.
com.
tw Copyright © 2013 Unisonic Technologies Co.
, Ltd 1 of 6 QW-R502-348.
D UF8010 Power MOSFET  ABSOLUTE MAXIMUM RATINGS (TJ=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Gate to Source Voltage Continuous Drain Current (VGS=10V,TC=25°C) Pulsed Drain Current Avalanche Energy Single Pulse (Note 2) Repetitive Avalanche Current Peak Diode Recovery dv/dt (Note 3) VGS ID IDM EAS EAR IAR dv/dt ±20 80 (Note 2) 320 310 26 45 16 V A A mJ mJ A V/ns Power Dissipation(TC=25°C) Derating above 25°C TO-220 / TO-263 TO-220F TO-220 / TO-263 TO-220F PD 260 W 54 W 1.
8 W/°C 0.
36 W/°C Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ + 150 °C Note: 1.
Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2.
Starting TJ = 25°C, L = 0.
31mH, RG =25Ω, IAS = 45A.
3.
ISD≤45A, di/dt≤110A/μs, VDD≤BVDSS, TJ≤ 150°C  THERMAL DATA PARAMETER Junction to Ambient Junction to Case TO-220 / TO-263 TO-220F SYMBOL θJA θJC RATINGS 62.
5 0.
57 2.
3 UNIT °C/W °C/W ...


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