DatasheetsPDF.com

30N06V-Q

Unisonic Technologies
Part Number 30N06V-Q
Manufacturer Unisonic Technologies
Description N-CHANNEL POWER MOSFET
Published Feb 18, 2016
Detailed Description UNISONIC TECHNOLOGIES CO., LTD 30N06V-Q Preliminary 60V, 30A N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 30N06V-Q i...
Datasheet PDF File 30N06V-Q PDF File

30N06V-Q
30N06V-Q


Overview
UNISONIC TECHNOLOGIES CO.
, LTD 30N06V-Q Preliminary 60V, 30A N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 30N06V-Q is a low voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and excellent avalanche characteristics.
This power MOSFET is usually used at automotive applications in power supplies, high efficient DC to DC converters and battery operated products.
 FEATURES * RDS(ON) < 40mΩ@VGS = 10 V, ID=15A * Fast switching capability * Avalanche energy specified  SYMBOL Power MOSFET  ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package 30N06VL-TM3-T 30N06VG-TM3-T TO-251 Note: Pin Assignment: G: Gate D: Drain S: Source Pin Assignment 123 GDS Packing Tube www.
unisonic.
com.
tw Copyright © 2013 Unisonic Technologies Co.
, Ltd 1 of 6 QW-R502-A29.
a 30N06V-Q Preliminary Power MOSFET  ABSOLUTE MAXIMUM RATINGS(TC = 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage Gate to Source Voltage VDSS VGSS 60 V ±20 V Continuous Drain Current TC = 25°C TC = 100°C ID 30 A 21.
3 A Pulsed Drain Current (Note 2) Avalanche Energy Single Pulsed (Note 3) Repetitive (Note 2) Power Dissipation IDM EAS EAR PD 120 A 250 mJ 8 mJ 46 W Junction Temperature Operation Temperature TJ TOPR +150 -55 ~ +150 °C °C Storage Temperature TSTG -55 ~ +150 °C Note: 1.
Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2.
Repeativity rating: pulse width limited by junction temperature 3.
L=0.
66mH, IAS=30A, VDD=25V, RG=20Ω, Starting TJ=25°C  THERMAL DATA PARAMETER Junction to Ambient Junction to Case SYMBOL θJA θJC RATING 110 2.
85 UNIT °C/W °C/W UNISONIC TECHNOLOGIES CO.
, LTD www.
unisonic.
com.
tw 2 of 6 QW-R502-A29.
a 30N06V-Q Preliminary Power MOSFET  ELECTRICAL CHARACTERISTICS...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)