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UF600

Unisonic Technologies
Part Number UF600
Manufacturer Unisonic Technologies
Description N-CHANNEL POWER MOSFET
Published Feb 19, 2016
Detailed Description UNISONIC TECHNOLOGIES CO., LTD UF600 A, 600V, N-CHANNEL POWER MOSFET Power MOSFET  DESCRIPTION The UTC UF600 is an N-...
Datasheet PDF File UF600 PDF File

UF600
UF600

Overview
UNISONIC TECHNOLOGIES CO.
, LTD UF600 A, 600V, N-CHANNEL POWER MOSFET Power MOSFET  DESCRIPTION The UTC UF600 is an N-channel Power MOSFET, it uses UTC’s advanced technology to provide the customers with high switching speed and high breakdown voltage, etc.
 FEATURES * RDS(on)<1.
2kΩ @VGS=0V, ID=3mA RDS(on)<1.
8kΩ @VGS=10V, ID=16mA * High switching speed * high breakdown voltage  ORDERING INFORMATION Ordering Number UF600G-AE2-R Note: Pin Assignment: G: Gate D: Drain Package SOT-23-3 S: Source Pin Assignment 123 SGD Packing Tape Reel  MARKING www.
unisonic.
com.
tw Copyright © 2014 Unisonic Technologies Co.
, Ltd 1 of 4 QW-502-A20.
B UF600 Power MOSFET  ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage Gate-Source Voltage VDSS 600 V VGSS ±20 V Drain Current Continuous Pulsed ID IDM 0.
185 0.
740 A A Power Dissipation Junction Temperature PD 0.
50 W TJ +150 °C Storage Temperature Range TSTG -55~+150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
 ELECTRICAL CHARACTERISTICS PARAMETER SYMBOL TEST CONDITIONS OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current Forward Reverse BVDSS IDSS IGSS ID=250µA, VGS=-5V VDS=480V VDS=540V VGS=+20V, VDS=0V VGS=-20V, VDS=0V ON CHARACTERISTICS Gate Threshold Voltage Static Drain-Source On-State Resistance VGS(TH) RDS(ON) VDS=3V, ID=8μA VGS=0V, ID=3mA VGS=10V, ID=16mA DYNAMIC PARAMETERS Input Capacitance Output Capacitance Reverse Transfer Capacitance CISS COSS CRSS VGS=0V, VDS=25V, f=1.
0MHz SWITCHING PARAMETERS Total Gate Charge Gate to Source Charge Gate to Drain Charge Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall-Time QG QGS QGD tD(ON) tR tD(OFF) tF VGS=-5~5V, VDS=25V, f=1.
0MHz VDD=30V, ID=5mA, RG=25Ω, VGS=-5~5V SOURCE- DRAIN DIODE RATINGS AN...


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