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PXFC191507FC

Part Number	PXFC191507FC
Manufacturer	Infineon
Description	Thermally-Enhanced High Power RF LDMOS FET
Published	Feb 19, 2016
Detailed Description	PXFC191507FC Thermally-Enhanced High Power RF LDMOS FET 150 W, 28 V, 1805 – 1990 MHz Description The PXFC191507FC is a...
Datasheet	PXFC191507FC PDF File

Overview

PXFC191507FC Thermally-Enhanced High Power RF LDMOS FET 150 W, 28 V, 1805 – 1990 MHz Description The PXFC191507FC is a 150-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to 1990 MHz frequency band.
Features include input and output matching, high gain and thermally-enhanced package with earless flanges.
Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability.
Gain (dB) Efficiency (%) Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 960 mA, VGS = 2.
65 V, ƒ = 1990 MHz, 3GPP WCDMA signal, PAR = 8 dB, 10 MHz carrier spacing, 22 BW 3.
84 MHz 21 Gain 60 50 20 40 19 30 18...

Similar Datasheet

PXFC191507FC Thermally-Enhanced High Power RF LDMOS FET - Infineon

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