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BSC0511NDI

Part Number	BSC0511NDI
Manufacturer	Infineon
Description	MOSFET
Published	Feb 20, 2016
Detailed Description	MOSFET MetalOxideSemiconductorFieldEffectTransistor OptiMOS™Power-Transistor,25V 25VOptiMOS™5PowerMOSFET BSC05...
Datasheet	BSC0511NDI PDF File

Overview

MOSFET MetalOxideSemiconductorFieldEffectTransistor OptiMOS™Power-Transistor,25V 25VOptiMOS™5PowerMOSFET BSC0511NDI DataSheet Rev.
2.
0 Final Industrial&Multimarket Dual N-Channel OptiMOS™5 MOSFET Features Product Summary • Dual N-channel OptiMOS™ MOSFET • Optimized for high performance buck converters • Logic level (4.
5V rated) VDS RDS(on),max • 100% avalanche tested ID • Qualified according to JEDEC1) for target applications VGS=10 V VGS=4.
5 V • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21 VPhase • Integrated monolithic Schottky-like diode BSC0511NDI Q1 Q2 25 25 V 2.
8 1.
0 mW 4.
2 1.
4 40 40 A Type BSC0511NDI Package PG-TISON-8 Marking 0511NDI Maximum ratings2) at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current I D T C=70 °C, V GS=10 V T A=25 °C, V GS=4.
5 V3) Value Q1 Q2 40 40 19 33 Unit A Pulsed drain current5) Avalanche energy, single pulse Gate source voltage Power dissipati...

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BSC0511NDI MOSFET - Infineon

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