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UT7401

UTC
Part Number UT7401
Manufacturer UTC
Description P-CHANNEL MOSFET
Published Feb 20, 2016
Detailed Description UNISONIC TECHNOLOGIES CO., LTD UT7401 Power MOSFET 1.2A, 30V P-CHANNEL ENHANCEMENT MODE POWER MOSFET  DESCRIPTION T...
Datasheet PDF File UT7401 PDF File

UT7401
UT7401

Overview
UNISONIC TECHNOLOGIES CO.
, LTD UT7401 Power MOSFET 1.
2A, 30V P-CHANNEL ENHANCEMENT MODE POWER MOSFET  DESCRIPTION The UTC UT7401 is P-channel enhancement mode power MOSFET, designed in serried ranks.
With fast switching speed, low on-resistance, favorable stabilization.
Used in commercial and industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
 SYMBOL 3.
Drain 3 1 2 SOT-23-3 (JEDEC TO-236) 3 21 SOT-323 3 1 2 SOT-23 (EIAJ SC-59) 2.
Gate 1.
Source  ORDERING INFORMATION Ordering Number Note: UT7401G-AE2-R UT7401G-AE3-R UT7401G-AL3-R Pin Assignment: S: Source G: Gate D: Drain Package SOT-23-3 SOT-23 SOT-323 Pin Assignment 123 SGD SGD SGD Packing Tape Reel Tape Reel Tape Reel  MARKING 74AG www.
unisonic.
com.
tw Copyright © 2015 Unisonic Technologies Co.
, Ltd 1 of 4 QW-R502-122.
F UT7401 Power MOSFET  ABSOLUTE MAXIMUM RATINGS (Ta = 25°С, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS -30 V Gate-Source Voltage Continuous Drain Current (Note 2) Pulsed Drain Current (Note 3) TA=25°C TA=70°C VGSS ID IDM ±12 -1.
2 -1.
0 -10 V A A A Power Dissipation (Note 2) TA=25°C TA=70°C PD 350 mW 220 mW Junction Temperature Storage Temperature TJ TSTG +150 -55 ~ +150 °С °С Notes:1.
Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2.
Pulse width limited by TJ(MAX) 3.
Pulse width ≤300us, duty cycle ≤2%.
 THERMAL DATA PARAMETER Junction to Ambient (Note 2) SYMBOL θJA RATINGS 425 UNIT °С/W  ELECTRICAL CHARACTERISTICS (TJ=25°С, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current BVDSS IDSS IGSS VGS=0V, ID=-250uA VDS=-24V, VGS=0V VDS=0V, VGS=±12V ON CHARACTERISTICS Gate Threshold Voltage Drain...


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