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UH11K

Unisonic Technologies
Part Number UH11K
Manufacturer Unisonic Technologies
Description NPN EPITAXIAL SILICON TRANSISTOR
Published Feb 21, 2016
Detailed Description UNISONIC TECHNOLOGIES CO., LTD UH11K Preliminary NPN EPITAXIAL SILICON TRANSISTOR DUAL BIAS RESISTOR TRANSISTORS  D...
Datasheet PDF File UH11K PDF File

UH11K
UH11K

Overview
UNISONIC TECHNOLOGIES CO.
, LTD UH11K Preliminary NPN EPITAXIAL SILICON TRANSISTOR DUAL BIAS RESISTOR TRANSISTORS  DESCRIPTION The UTC UH11K is a dual bias resistor transistors, it uses UTC’s advanced technology to provide customers with saving board space, reducing component count, etc.
The UTC UH11K is suitable for low power surface mount applications, etc.
 FEATURES * Reducing component count * Saving board space  EQUIVALENT CIRCUIT  ORDERING INFORMATION Ordering Number UH11KG-AL6-R Note: Pin Assignment: G: Gate D: Drain Package SOT-363 S: Source Pin Assignment 123456 E1 B1 C2 E2 B2 C1 UH11KG-AL6-R (1)Packing Type (2)Package Type (1) R: Tape Reel (2) AL6: SOT-363 (3)Green Package (3) G: Halogen Free and Lead Free Packing Tape Reel  MARKING www.
unisonic.
com.
tw Copyright © 2014 Unisonic Technologies Co.
, Ltd 1 of 3 QW-R218-027.
b UH11K Preliminary NPN EPITAXIAL SILICON TRANSISTOR  ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage Collector-Emitter Voltage VCBO VCEO 50 V 50 V Collector Current Power Dissipation IC 100 mA PD 150 mW Junction Temperature Storage Temperature TJ TSTG -55~+150 -55~+150 °C °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
 ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Collector-Base Breakdown Voltage BVCBO IC=10µA, IE=0 Collector-Emitter Breakdown Voltage (Note 1) BVCEO IC=2.
0mA, IB=0 Collector-Base Cutoff Current ICBO VCB=50V, IE=0 Collector-Emitter Cutoff Current ICEO VCE=50V, IB=0 Emi...


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