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PTFB093608SV

Infineon
Part Number PTFB093608SV
Manufacturer Infineon
Description Thermally-Enhanced High Power RF LDMOS FET
Published Feb 21, 2016
Detailed Description PTFB093608SV Thermally-Enhanced High Power RF LDMOS FET 320 W, 28 V, 920 – 960 MHz Description The PTFB093608SV is an ...
Datasheet PDF File PTFB093608SV PDF File

PTFB093608SV
PTFB093608SV

Overview
PTFB093608SV Thermally-Enhanced High Power RF LDMOS FET 320 W, 28 V, 920 – 960 MHz Description The PTFB093608SV is an LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 920 to 960 MHz frequency band.
Features include input and output matching, high gain and thermally-enhanced package with earless flange.
Manufactured with Infineon’s advanced LDMOS process, this device provides excellent thermal performance and superior reliability.
PTFB093608SV Package H-37275G-6/2 Gain (dB) Drain Efficiency (%) Two-carrier WCDMA 3GPP Drive Up VDD = 28 V, IDQ = 2.
8 A, ƒ = 960 MHz, 3GPP WCDMA, PAR = 8 dB, 10 MHz carrier spacing, BW 3.
84 MHz 21.
0 60 20.
5 50 20.
0 Gain 19.
5 40 30 19.
0 20 18.
5 18.
0 35 Efficiency 40 45 50 Output Power Avg.
(dBm) 10 0 55 Features • Broadband internal matching • Enhanced for use in DPD error correction systems and Doherty applications • Wide video bandwidth • Typical single-carrier WCDMA performance, 960 MHz, 28 V, device leads in gullwing configuration - Average output power = 160 W - Gain = 19 dB - Efficiency = 40% • Integrated ESD protection • Low thermal resistance • Capable of handling 10:1 VSWR @ 32 V, 960 MHz, +3 dB Input Overdrive = 500 W (CW) output power • Pb-Free and RoHS compliant RF Characteristics Single-carrier WCDMA Specifications (device with straight leads, tested in Infineon test fixture) VDD = 28 V, IDQ = 2.
8 A, POUT = 112 W average, ƒ = 960 MHz, 3GPP signal, channel bandwidth = 3.
84 MHz, PAR = 10 dB @ 0.
01% CCDF probability Characteristic Symbol Min Typ Max Unit Gain Drain Efficiency Gps 18 20 — dB hD 33.
5 34 — % Adjacent Channel Power Ratio ACPR — –36 –31.
5 dBc All published data at TCASE = 25°C unless otherwise indicated ESD: Electrostatic discharge sensitive device—observe handling precautions! Data Sheet 1 of 13 Rev.
05, 2015-01-22 PTFB093608SV DC Characteristics Characteristic Drain-Source Breakdown Voltage Dra...


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