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GTVA221701FA

Part Number	GTVA221701FA
Manufacturer	Infineon
Description	Thermally-Enhanced High Power RF GaN HEMT
Published	Feb 23, 2016
Detailed Description	advance specification GTVA221701FA advance specification Thermally-Enhanced High Power RF GaN HEMT 170 W, 50 V, 1805 –...
Datasheet	GTVA221701FA PDF File

Overview

advance specification GTVA221701FA advance specification Thermally-Enhanced High Power RF GaN HEMT 170 W, 50 V, 1805 – 2170 MHz Description The GTVA221701FA is a 170-watt (P3dB) GaN high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications.
It features input matching, high efficiency, and a thermally-enhanced package with earless flange.
Features • Input matched • Typical Pulsed CW performance, 1805 MHz, 48 V, single side - Output power at P3dB = 200 W - Efficiency = 70% - Gain = 18 dB • Capable of handling 10:1 VSWR @48 V, 140 W (CW) output power • GaN HEMT technology • High power density • High efficiency • RoHS-compliant Advance Specification Data Sheets describe products that are being considered by Infineon for development and market introduction.
The target performance shown in Advance Specifications is not final and should not be used for any design activity.
Please contact Infineon about the future availability of these products.
GTVA261701FA Package H-37265J-2 Target RF Characteristics Single- carrier WCDMA Specifications (tested in Infineon test fixture) VDD = 48 V, IDQ = 300 mA, 3GPP signal, channel bandwidth = 3.
84 MHz, peak/average = 9.
9 dB @ 0.
01% CCDF Characteristics Conditions Symbol Min Typ Max Linear Gain Gps — 19 — Drain Efficiency ƒ1 = 1805 MHz, POUT = 50 W avg hD — 38 — Adjacent Channel Power Ratio ACPR — –32 — Linear Gain Gps — 19 — Drain Efficiency ƒ2 = 2170 MHz, POUT = 50 W avg hD — 36 — Adjacent Channel Power Ratio ACPR — –28 — Unit dB % dBc dB % dBc All published data at TCASE = 25°C unless otherwise indicated ESD: Electrostatic discharge sensitive device—observe handling precautions! Advance Specification 1 of 4 Rev.
01, 2015-07-27 GTVA221701FA advance specification DC Characteristics (measured on wafer prior to packaging) Characteristic Drain-source Breakdown Voltage nGate Threshold Voltage Gate Quiescent Voltage oSaturated Drain Curr...

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GTVA221701FA Thermally-Enhanced High Power RF GaN HEMT - Infineon

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