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GTVA220701FA

Part Number	GTVA220701FA
Manufacturer	Infineon
Description	Thermally-Enhanced High Power RF GaN HEMT
Published	Feb 23, 2016
Detailed Description	advance specification GTVA220701FA advance specification Thermally-Enhanced High Power RF GaN HEMT 70 W, 50 V, 1805 – ...
Datasheet	GTVA220701FA PDF File

Overview

advance specification GTVA220701FA advance specification Thermally-Enhanced High Power RF GaN HEMT 70 W, 50 V, 1805 – 2170 MHz Description The GTVA220701FA is a 70-watt (P3dB) GaN high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications.
It features input matching, high efficiency, and a thermally-enhanced package with earless flange.
Features • Input matched • Typical Pulsed CW performance, 2170 MHz, 48 V - Output power at P3dB = 70 W - Efficiency = 70% - Gain = 20 dB • Capable of handling 10:1 VSWR @48 V, 70 W (CW) output power • GaN HEMT technology • High power density • High efficiency • RoHS-compliant Advance Specification Data...

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GTVA220701FA Thermally-Enhanced High Power RF GaN HEMT - Infineon

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