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IPB64N25S3-20

Infineon
Part Number IPB64N25S3-20
Manufacturer Infineon
Description Power MOSFET
Published Feb 23, 2016
Detailed Description OptiMOS®-T Power-Transistor Features • N-channel - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175...
Datasheet PDF File IPB64N25S3-20 PDF File

IPB64N25S3-20
IPB64N25S3-20

Overview
OptiMOS®-T Power-Transistor Features • N-channel - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested Product Summary VDS RDS(on),max ID IPB64N25S3-20 250 V 20 m 64 A PG‐TO263‐3‐2 Type IPB64N25S3-20 Package PG-TO263-3-2 Marking 3PN2520 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions I D T C=25 °C, V GS=10 V T C=100°C, V GS=10V1) Pulsed drain current1) Avalanche energy, single pulse1) I D,pulse E AS T C=25°C I D=27A Avalanche current, single pulse I AS - Reverse diode dv /dt dv /dt Gate source voltage Power dissi...


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