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2N3019S-M

DSI
Part Number 2N3019S-M
Manufacturer DSI
Description TRANSISTOR
Published Feb 23, 2016
Detailed Description Technical Data TRANSISTOR maximum ratings Voltage, Collector to Base (VCBO) Voltage, Collector to Emitter (VCE) Voltag...
Datasheet PDF File 2N3019S-M PDF File

2N3019S-M
2N3019S-M

Overview
Technical Data TRANSISTOR maximum ratings Voltage, Collector to Base (VCBO) Voltage, Collector to Emitter (VCE) Voltage, Emitter to Base (VEBO) Collector Current (IC) Base Current (IB) Max.
Power Dissipation (PT) at TC = 25 °C Max.
Thermal Resistance (Rth J-C) Max.
Junction Temperature (TJ) empty 140.
0 V 80.
0 V 7.
0 V 1.
0 A empty A 5.
0 W 35.
0 °C/W 200.
0 °C empty empty NO.
TYPE empty empty CASE empty empty 2N3019S-M NPN empty empty TO-39 MIL-S-19500 BURN-IN 48h/125°C PERFORMANCE CHARACTERISTICS at T = 25°C, unless otherwise noted C NO.
SYMBOL CONDITIONS MIN.
MAX.
UNITS 1.
BVCBO IC = 100.
0 µA 140.
0 - V 2.
BVCEO IC = 30.
0 mA (1) 80.
0 - V 3.
BVEBO IE = 100.
0 µA 7.
0 - V 4.
hFE IC = 0.
1 mA, VCE = 10.
0 V (1) 50.
0 - - 5.
hFE IC = 10.
0 mA, VCE = 10.
0 V (1) 90.
0 - - 6.
hFE IC = 150.
0 mA, VCE = 10.
0 V (1) 100.
0 300.
0 - 7.
hFE IC = 500.
0 mA, VCE = 10.
0 V (1) 50.
0 - - 8.
hFE IC = 1000.
0 mA, VCE = 10.
0 V (1) 15.
0 - - 9.
VCE(SAT) IC = 150.
0 m...


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