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PMZ1200UPE

NXP
Part Number PMZ1200UPE
Manufacturer NXP
Description P-channel Trench MOSFET
Published Feb 24, 2016
Detailed Description SOT883 PMZ1200UPE 30 V, P-channel Trench MOSFET 25 March 2015 Product data sheet 1. General description P-channel enh...
Datasheet PDF File PMZ1200UPE PDF File

PMZ1200UPE
PMZ1200UPE


Overview
SOT883 PMZ1200UPE 30 V, P-channel Trench MOSFET 25 March 2015 Product data sheet 1.
General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2.
Features and benefits • Trench MOSFET technology • Low threshold voltage • Very fast switching • ElectroStatic Discharge (ESD) protection > 2 kV HBM • Leadless ultra small SMD package: 1.
0 x 0.
6 x 0.
48 mm 3.
Applications • Relay driver • High-speed line driver • High-side loadswitch • Switching circuits 4.
Quick reference data Table 1.
Quick reference data Symbol Parameter VDS drain-source voltage VGS gate-source voltage ID drain current Static characteristics RDSon drain-source on-state resistance Conditions Tj = 25 °C VGS = -4.
5 V; Tamb = 25 °C VGS = -4.
5 V; ID = -410 mA; Tj = 25 °C [1] Min Typ Max Unit - - -30 V -8 - 8V - - -410 mA - 1.
2 1.
4 Ω [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 1 cm2.
Scan or click this QR code to view the latest information for this product NXP Semiconductors PMZ1200UPE 30 V, P-channel Trench MOSFET 5.
Pinning information Table 2.
Pinning information Pin Symbol Description 1 G gate 2 S source 3 D drain Simplified outline 1 3 2 Transparent top view DFN1006-3 (SOT883) Graphic symbol G D S 017aaa259 6.
Ordering information Table 3.
Ordering information Type number Package Name PMZ1200UPE DFN1006-3 Description Version DFN1006-3: leadless ultra small plastic package; 3 solder lands SOT883 7.
Marking Table 4.
Marking codes Type number PMZ1200UPE Marking code ZL PMZ1200UPE Product data sheet All information provided in this document is subject to legal disclaimers.
25 March 2015 © NXP Semiconductors N.
V.
2015.
All rights reserved 2 / 15 NXP Semiconductors PMZ1200UPE 30 V, P-channel Trench MOSFET 8.
Limiting values Table 5.
Limiting values In acc...


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