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STPS30M60S

STMicroelectronics
Part Number STPS30M60S
Manufacturer STMicroelectronics
Description Power Schottky rectifier
Published Feb 24, 2016
Detailed Description STPS30M60S Power Schottky rectifier Features ■ High current capability ■ Avalanche rated ■ Low forward voltage drop ■ H...
Datasheet PDF File STPS30M60S PDF File

STPS30M60S
STPS30M60S


Overview
STPS30M60S Power Schottky rectifier Features ■ High current capability ■ Avalanche rated ■ Low forward voltage drop ■ High frequency operation Description The STPS30M60S is a single Schottky diode, suited for high frequency switch mode power supply.
Packaged in TO-220AB, I2PAK and D2PAK, this device is intended to be used in notebook, game station and desktop adapters, providing in these applications a good efficiency at both low and high load.
Table 1.
Device summary Symbol IF(AV) VRRM VF (typ) Tj (max) Value 30 A 60 V 0.
380 V 150 °C A A K A K A I2PAK STPS30M60SR K K K A A D2PAK STPS30M60SG-TR A K A TO-220AB STPS30M60ST Figure 1.
Electrical characteristics(a) VI "Forward" I 2 x IO X VRRM VAR VR IF IO IR X V "Reverse" VTo VF(Io) VF VF(2xIo) IAR October 2011 a.
VARM and IARM must respect the reverse safe operating area defined in Figure 12.
VAR and IAR are pulse measurements (tp < 1 µs).
VR, IR, VRRM and VF, are static characteristics Doc ID 022049 Rev 1 1/9 www.
st.
com 9 Characteristics 1 Characteristics STPS30M60S Table 2.
Absolute ratings (limiting values with terminals 1 and 3 short circuited at 25 °C, unless otherwise specified) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage IF(RMS) Forward rms current IF(AV) Average forward current, δ = 0.
5 Tc = 130 °C Per package IFSM Surge non repetitive forward current PARM(1) Repetitive peak avalanche power tp = 10 ms sine-wave Tj = 25 °C, tp = 1 µs VARM(2) Maximum repetitive peak avalanche voltage tp < 1 µs, Tj < 150 °C, IAR < 129 A 60 90 30 600 34400 80 V A A A W V VASM(2) Maximum single-pulse peak avalanche voltage tp < 1 µs, Tj < 150 °C, IAR < 129 A 80 V Tstg Storage temperature range Tj Maximum operating junction temperature(3) -65 to +175 °C 150 °C 1.
For temperature or pulse time duration deratings, please refer to Figure 4 and 5.
More details regarding the avalanche energy measurements and diode validation in the avalanche are provided in the applicati...



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