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MRF373ASR1

Part Number	MRF373ASR1
Manufacturer	Motorola
Description	RF Power Field Effect Transistors
Published	Feb 24, 2016
Detailed Description	MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF373A/D The RF MOSFET Line RF Power Field Effect Transi...
Datasheet	MRF373ASR1 PDF File

Overview

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF373A/D The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz.
The high gain and broadband performance of these devices make them ideal for large–signal, common source amplifier applications in 28/32 volt transmitter equipment.
• Typical CW Performance at 860 MHz, 32 Volts, Narrowband Fixture Output Power — 75 Watts Power Gain — 18.
2 dB Efficiency — 60% • 100% Tested for Load Mismatch Stress at All Phase Angles with 10:1 VSWR @ 32 Vdc, 860 MHz, 75 Watts CW • Integrated ESD Protection • Excellent Thermal Stability D • Characterized with Series Equivalent Large–Signal Impedance Parameters • In Tape and Reel.
R1 = 500 units per 32 mm, 13 inch Reel.
MRF373AR1 MRF373ASR1 470 – 860 MHz, 75 W, 32 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFETs CASE 360B–05, STYLE 1 NI–360 MRF373AR1 ...

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